ACTA

Influence of Electron Blocking Layer on Properties of InGaN-Based Laser Diodes Grown by Plasma-Assisted Molecular Beam Epitaxy

M. Hajdel^a, G. Muziol^a, K. Nowakowski-Szkudlarek^a, M. Siekacz^a, A. Feduniewicz-Żmuda^a, P. Wolny^a, C. Skierbiszewski^{a, b}
^aInstitute of High Pressure Physics, Polish Academy of Sciences, Sokołowska 29/37, PL-01142 Warsaw, Poland
^bTopGaN Ltd, Sokołowska 29/37, PL-01142 Warsaw, Poland

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We investigate influence of Mg doping concentration and the thickness of electron blocking layer on properties of InGaN-based laser diodes grown by plasma-assisted molecular beam epitaxy. Using simple measurements of light-current characteristics and simulations, two main conclusions are drawn. First one - the Mg dopant is responsible for optical losses, as in the case of the laser diodes grown by metalorganic vapor phase epitaxy. Second one - the low Mg doping causes electrons to overflow through electron blocking layer. Additionally, tunneling is proposed as an escape mechanism of carriers from active region for thin electron blocking layer.

DOI:10.12693/APhysPolA.136.593
topics: InGaN lasers, optical losses, Mg doping, EBL thickness, PAMBE