ACTA

The Influence of Chromium Thermal-Diffusion-Based Doping on the Spatial Distribution of Luminescence Intensity in ZnSe

A. Gladilin^a, O. Uvarov^a, S. Mironov^a, N. Timofeeva^b, E. Gavrischuk^b, V. Kalinushkin^a
^aProkhorov General Physics Institute of the Russian Academy of Sciences, 38 Vavilova Str., 119991 Moscow, Russia
^bDevyatykh Institute of Chemistry of High-Purity Substances of the Russian Academy of Sciences, 49 Tropinina Str., 603950 Nizhny Novgorod, Russia

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We have studied the influence of chromium doping of ZnSe crystals at 1250° on the spatial distribution of luminescence in the spectral range of 0.44 to 0.73 μm. It is expected that several types of defective-impurity centers are formed due to the doping process. Centers of at least one type demonstrate complex distribution and lead to formation of area with high intensity luminescence looking like a bright strip parallel to doping surface.

DOI:10.12693/APhysPolA.136.637
topics: two photon excitation, luminescence, semiconductors, doping, ZnSe:Cr