Modification of MIS Devices by Radio-Frequency Plasma Treatment

D.V. Andreeva, G.G. Bondarenkob, V.V. Andreeva, V.M. Maslovskyc, A.A. Stolyarova aBauman Moscow State Technical University, the Kaluga branch, 2, Bazhenov Str., Kaluga 248000, Russia bNational Research University Higher School of Economics, 20, Myasnitskaya Str., Moscow 101000, Russia cMoscow Institute of Physics and Technology (State University), 9, Institutskii per., Dolgoprudnyi, Moscow region 141700, Russia

Full Text PDF

The paper considers an influence of different kinds of radio-frequency plasma treatments onto modification of MIS structures with a thermal SiO2 film which is aimed at improvement of electro-physical parameters of the film. It was found that for the modification of MIS structures it is more preferable to utilize the oxygen plasma radio-frequency plasma treatment performed by a setup with the parallel-plate-type reactor. This is due to the fact that setup allows to have lesser degradation of charge characteristics of the gate dielectric in comparison with a setup with the cylindrical quartz reactor. The radio-frequency plasma treatment stimulates restructuring of SiO2 film and, as a result, diminishes possibility of sample breakdown and raises injection and radiation stability of the samples.

DOI:10.12693/APhysPolA.136.263 PACS numbers: 72.20.Ht, 72.20.Jv, 73.20.At, 73.40.Qv, 73.40.Ty, 77.22.Jp, 77.55.-g