ACTA

Thermal Desorption of He Implanted into Ge

M. Turek^a, A. Droździel^a, K. Pyszniak^a, S. Prucnal, J. Żuk^a, Y. Vaganov^b
^aInstitute of Physics, Maria Curie Sklodowska University in Lublin, Pl. M. Curie-Sklodowskiej 1, 20-031 Lublin, Poland
^bJoint Institute for Nuclear Research, Joliot-Curie 6, Dubna, Russia

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The thermal desorption spectrometry (TDS) measurements of He implanted with the energies 80 keV and 100 keV into Ge was considered. The release of the noble gas took place at temperature range 600-950 K. The TDS spectra had a form of a very wide peak consisting of two parts which means that one deals with two states of He into Ge. No surface blistering or formation of craters was observed after the annealing of the samples implanted with the fluence 1×10¹⁶ cm^-2. the critical fluence needed for bubble formation in Ge is higher than for Si. The analysis of the peak shift with the heating ramp rate allows estimation of desorption activation energies. They are close to 0.8 eV for both peaks (100 keV) while the energy for the second peak in the case of E=80 keV was more than twice higher.

DOI:10.12693/APhysPolA.136.285
PACS numbers: 68.43.Vx, 61.72.uf