Magnetic Anisotropy in Doped Graphene with Rashba Spin-Orbit Interaction
M. Inglot, V. Dugaev
Department of Physics and Medical Engineering, Rzeszów University of Technology, al. Powstańców Warszawy 6, 35-959 Rzeszów, Poland
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We present our calculations of on-site magnetic anisotropy (MA) in graphene with magnetic atoms. We assume that the graphene layer is placed on a substrate, which generates the homogeneous Rashba spin-orbit field. The resonant state in the presence of Rashba spin-orbit interaction is calculated for two possible orientations of the magnetic moment namely perpendicular, Sz=1, and parallel, Sz=0, to the graphene plane. The magnetic anisotropy is calculated as a difference between the energies of these states and presented as a function of impurity potential g0 and magnitude of the Rashba spin-orbit coupling α.

DOI:10.12693/APhysPolA.135.1249
topics: graphene, magnetic anisotropy, Rashba spin-orbit interaction, magnetic impurity