Cu2O-Based Homostructure Fabricated by Electrodeposition Method
F. Mohamada, N.M. Arifina, A.Z.M. Ismaila, N. Ahmada, M.N.N. Hisyamudinb, M. Izakic
aUniversiti Tun Hussein Onn Malaysia, Department of Electronic Engineering, 86400, Parit Raja, Batu Pahat, Johor, Malaysia
bUniversiti Tun Hussein Onn Malaysia, Faculty of Mechanical & Manufacturing Engineering, 86400, Parit Raja, BatuPahat, Johor, Malaysia
cToyohashi University of Technology, Faculty of Mechanical Engineering, Toyohashi, Japan
Full Text PDF
The Cu2O-based homostructure thin film was successfully fabricated on FTO glass substrate using conventional electrodeposition method. Prior to the p-Cu2O thin film deposition, cyclic voltammetry (CV) measurement was carried out in order to obtain optimum deposition parameter. Based on the CV result, p-Cu2O thin film was deposited on n-Cu2O with deposition potential of -0.4 V vs Ag/AgCl, solution temperature of 40° and pH 12.5, respectively. The deposition time was varied and it was found that the optimum deposition time for Cu2O-based homostructurethin film was 2 h. Structural, morphological, and optical properties were characterized using X-ray diffraction, field emission-scanning electron microscope and ultraviolet and visible absorption spectroscopy, respectively. The successful fabrication of homostructure was confirmed using photoelectrochemical measurement.

DOI:10.12693/APhysPolA.135.911
topics: n-Cu2O, p-Cu2O homostructure, electrodeposition, deposition time