Cu2O-Based Homostructure Fabricated by Electrodeposition Method |
| F. Mohamada, N.M. Arifina, A.Z.M. Ismaila, N. Ahmada, M.N.N. Hisyamudinb, M. Izakic
aUniversiti Tun Hussein Onn Malaysia, Department of Electronic Engineering, 86400, Parit Raja, Batu Pahat, Johor, Malaysia bUniversiti Tun Hussein Onn Malaysia, Faculty of Mechanical & Manufacturing Engineering, 86400, Parit Raja, BatuPahat, Johor, Malaysia cToyohashi University of Technology, Faculty of Mechanical Engineering, Toyohashi, Japan |
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| The Cu2O-based homostructure thin film was successfully fabricated on FTO glass substrate using conventional electrodeposition method. Prior to the p-Cu2O thin film deposition, cyclic voltammetry (CV) measurement was carried out in order to obtain optimum deposition parameter. Based on the CV result, p-Cu2O thin film was deposited on n-Cu2O with deposition potential of -0.4 V vs Ag/AgCl, solution temperature of 40° and pH 12.5, respectively. The deposition time was varied and it was found that the optimum deposition time for Cu2O-based homostructurethin film was 2 h. Structural, morphological, and optical properties were characterized using X-ray diffraction, field emission-scanning electron microscope and ultraviolet and visible absorption spectroscopy, respectively. The successful fabrication of homostructure was confirmed using photoelectrochemical measurement. |
DOI:10.12693/APhysPolA.135.911 topics: n-Cu2O, p-Cu2O homostructure, electrodeposition, deposition time |