An Insight into the Influence of Donor Compensating Defects in Doped ZnO Thin Films |
| S. Ghosh, D. Basak
School of Physical Sciences, Indian Association for the Cultivation of Science, Jadavpur, Kolkata-700032, India |
| Received: November 14, 2018; revised version April 5, 2019; in final form April 11, 2019 |
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| Herein, we report a study on the role of acceptor-like VZn (zinc vacancy) donor compensating defects in ZnO by studying In and Sn doped RF magnetron sputtered ZnO thin films prepared under exactly similar growth and post-growth annealing conditions. Sn dopants in ZnO films have been activated largely as evidenced by a more than two orders of magnitude increase in the carrier concentration as compared to the as-grown films while In dopants are activated by only 7 times after a post-growth annealing in excess Zn. Interestingly, an enhanced mobility due to annealing further strengthen the feasible compensation between the dopants and the acceptor-like defects. |
DOI:10.12693/APhysPolA.135.467 topics: zinc vacancy, donor compensating defects, doped ZnO thin films, mobility, Urbach energy |