Growth and Laser Modulation Properties of KTa0.63Nb0.37O3 Single Crystals |
| Bing Liua, b, Huadi Zhanga, b, Yuanyuan Zhanga, b, Xianshun Lva, b, Yuguo Yanga, b, Lei Weia, b, Xuping Wanga, b, Huajian Yua, b, Cong Zhanga, b, Jing Lia, c
aAdvanced Materials Institute, Qilu University of Technology (Shandong Academy of Sciences), Jinan 250014, China bQilu University of Technology (Shandong Academy of Sciences), Advanced Materials Institute, Key Laboratory for Light Conversion Materials and Technology of Shandong Academy of Sciences, Jinan 250014, China cQilu University of Technology (Shandong Academy of Sciences), Advanced Materials Institute, Shandong Provincial Key Laboratory for High Strength Lightweight Metallic Materials, Jinan 250014, China |
| Received: April 19, 2017; in final form August 20, 2018 |
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| KTa0.63Nb0.37O3 (KTN) single crystals were grown by a top seeded solution growth method. We found that the composition variation of crystal is smaller if the weight of melting raw materials is larger. The phase, dielectric property, and transmittance of the grown KTN single crystals were investigated. The dependence of dielectric constant on temperature indicated that crystal chips cutting from the shoulder, body, and bottom both have the same Tc value of 17°, which suggests the homogeneity of the grown crystals. The laser modulation using a KTN chip indicates potential applications in deflectors due to the advantage of high angular accuracy. |
DOI:10.12693/APhysPolA.135.396 topics: KTN single crystal, TSSG, homogeneity, laser modulation |