Effect of Reservoirs on Transport Properties of Doped Structures Acta Physica Polonica A 134, 923 (2018), ERRATUM
K. Kulinowski, M. Wołoszyn, B. Spisak
AGH University of Science and Technology, Faculty of Physics and Applied Computer Science, al. A. Mickiewicza 30, 30-059 Kraków, Poland
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Influence of boundary conditions on the transport properties of a semiconductor device is presented. The boundary conditions are generated by convolution of the supply function and Lorentzian or Voigt profile. Transport characteristics are determined by solution of the kinetic equation within the relaxation time approximation.

DOI:10.12693/APhysPolA.134.1248
PACS numbers: 51.10.+y, 72.10.Bg, 72.80.Ey