ACTA

Vertical GaN Schottky Diodes Grown on Highly Conductive Ammono-GaN Substrate

P. Kruszewski^{a, b}, P. Prystawko^{a, b}, M. Grabowski^a, T. Sochacki^a, A. Sidor^a, M. Bockowski^{a, b}, J. Jasinski^c, L. Lukasiak^c, R. Kisiel^c, M. Leszczynski^{a, b}
^aInstitute of High Pressure Physics, Polish Academy of Sciences, Sokolowska 29/37, 01-142 Warsaw, Poland
^bTop-GaN Ltd, Sokolowska 29/37, 01-142 Warsaw, Poland
^cInstitute of Microelectronics and Optoelectronics, Warsaw University of Technology, Koszykowa 75, 00-662 Warsaw, Poland

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We report on vertical n-GaN high voltage Schottky diodes grown by metal organic chemical vapour deposition and hydride vapour phase epitaxy on conductive ammono-GaN substrate. The thermionic emission current model has been applied for diodes analysis and parameters extraction. Finally, we demonstrate that breakdown voltage as high as 670 V for such structures can be achieved.

DOI:10.12693/APhysPolA.134.969
PACS numbers: 85.30.Hi, 85.30.Kk, 52.59.Mv