Application of High-Resistivity Silicon Substrate for Fabrication of MOSFET-Based THz Radiation Detectors

K. Kucharskia, D. Tomaszewskia, G. Głuszkoa, P. Kopytb, J. Marczewskia, P. Zagrajekc, A. Panasa aInstitute of Electron Technology, Aleja Lotnikow 32/46, PL-02668 Warsaw, Poland bInstitute of Radioelectronics, Nowowiejska 15/19, 00-665 Warsaw, Poland cMilitary University of Technology, Gen. W. Urbanowicza 2, 00-908 Warsaw, Poland

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It is well known that integration of THz detectors with silicon lenses (made of high-resistive Si) brings several advantages including a significant increase of the detector responsivity due to the increased aperture of the detector. THz detectors manufactured in CMOS technology are based usually on a n-type sensing transistor monolithically integrated with an antenna fabricated in the same process sequence. Integration of such a detector with Si lens is not an easy task. The simplest way is to introduce the THz radiation through the silicon lens glued to the substrate, which then has to be made (if possible) of high-resistive silicon to avoid energy losses. Following results of several experiments described in this paper our CMOS process sequence has been modified both with respect to the substrate change and then maximizing of the antenna efficiency by removal of heavily doped areas of the channel stopper in its vicinity

DOI:10.12693/APhysPolA.134.966 PACS numbers: 85.30.Tv, 85.60.Gz, 42.79.Pw