ACTA

Fourier-Transformed Temperature-Dependent Photoluminescence of GaSb-Based Resonant Tunneling Structure with GaInAsSb Absorption Layer

M. Dyksik^a, M. Motyka^a, M. Kurka^a, J. Misiewicz^a, A. Pfenning^b, F. Hartmann^b, R. Weih^b, L. Worschech^b, S. Höfling^{b, c}, G. Sęk^a
^aLaboratory for Optical Spectroscopy of Nanostructures, Department of Experimental Physics, Faculty of Fundamental Problems of Technology, Wroclaw University of Science and Technology, Wybrzeże Wyspiańskiego 27, Wrocław 50-370, Poland
^bTechnische Physik and Wilhelm Conrad Röntgen Research Center for Complex Material Systems, Physikalisches Institut, Universität Würzburg, Am Hubland, D-97074, Würzburg, Germany
^cSUPA, School of Physics and Astronomy, University of St. Andrews, St. Andrews, KY16 9SS, United Kingdom

Full Text PDF

The band structure of type-II resonant tunneling structures with a quaternary GaInAsSb absorption layer was studied by means of Fourier-transformed photoluminescence in the mid-infrared spectral region. The temperature-resolved measurement revealed a low-energy band with non-trivial photoluminescence spectra evolution. At low temperature the emission originating from the confined states within the type II GaSb/AlSb/InAs quantum well dominates the spectrum. The increase of temperature triggers the hole transfer from the GaSb quantum wells to the heavy hole band edge of the quaternary GaInAsSb material. The GaInAsSb-related emission line arises at 130 K and gains in intensity up to room temperature.

DOI:10.12693/APhysPolA.134.962
topics: GaSb-based resonant tunneling diodes, mid-infrared, photoluminescence