Effect of Magnesium Substitution on Dielectric Constant of Zn2-xMgxInV3O11 (x = 0.0, 0.4, 1.6) Solid Solutions
B. Sawickia, M. Bosackab, E. Filipekb, T. Grońa, H. Dudaa, M. Oboza, P. Urbanowicza
aUniversity of Silesia, Institute of Physics, Uniwersytecka 4, 40-007 Katowice, Poland
bWest Pomeranian University of Technology, Szczecin, Faculty of Chemical Technology and Engineering, Department of Inorganic and Analytical Chemistry, al. Piastów 42, 71-065 Szczecin, Poland
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The results of magnetic and dielectric measurements of Zn2-xMgxInV3O11 phases with x=0.0, 0.4, and 1.6 showed diamagnetic behavior above room temperature and a strong increase in the relative electrical permittivity, εr, with an increase in the magnesium content as well as the high loss tangent, tan δ, above 150 K, irrespective of the magnesium content in the sample. With the increase in the frequency of the electric field both εr and tan δ strongly decreased. At low temperatures a residual paramagnetism coming from the paramagnetic ions of vanadium was observed. These effects were interpreted within a framework of the vacancy trapping centers acting as the accumulation of electric charges on the one hand and a mixed valence of vanadium ions on the other.

DOI:10.12693/APhysPolA.134.958
PACS numbers: 72.20.Pa, 72.80.Ga, 75.50.Pp, 75.20.-g