1.16 μm InAs/GaAs Quantum Dot Laser grown by Metal Organic Chemical Vapor Deposition |
| Hao Liu, Qi Wang, Zhiming Li, Jia Chen, Kai Liu, Xiaomin Ren
State Key Laboratory of Information Photonics and Optical Communications, Beijing University of Posts and Telecommunications, P.O.B. 66, 10, Xitucheng Road, Haidian District, Beijing 100876, People's Republic of China |
| Received: May 8, 2017; in final form May 10, 2018 |
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| In this study, a 1.16 μm InAs/GaAs quantum dot laser operating at continuous wave condition grown by metal organic chemical vapor deposition was demonstrated. For the quantum dot laser diode with 2 mm cavity length and 10 μm stripe width bonded on a heat sink, continuous wave lasing can still be observed up to 55°. At room temperature, threshold current density was as low as 950 A/cm2 and the output power reached 25.4 mW under 300 mA injection current (1.58Ith). In addition, the external differential efficiency of 43.1%, the internal quantum efficiency of 59.6% and the internal loss of 2.2 cm-1 have been obtained, respectively. |
DOI:10.12693/APhysPolA.134.508 PACS numbers: 42.55.Px, 81.15.Gh |