Determination of the Lifetime in As Doped a-Se from Transient Photocurrents using Laplace Transform Technique |
| F. Serdouk, M. Benkhedir
Laboratoire de Physique Appliquée et Théorique, LPAT, Université Larbi Tébessi-Tébessa, Algérie |
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| The identification, in our earlier papers, of the discrete energy levels in stabilized a-Se indicate that doping with As in the limit of 0.2-0.5% suppresses the shallow defect and increases the density of the deep one. It may be added at this point that an undesirable decrease in the hole lifetime τ was found to accompany the introduction of As in the a-Se lattice, which was attributed to a new hole trap. More analysis is clearly needed to resolve these questions. For these reasons we have developed a technique to calculate the lifetime. The obtained results confirm the image of the density of states near the valance band. |
DOI:10.12693/APhysPolA.134.168 topics: stabilized a-Se, transient photocurrent (TPC), multitraping model, high resolution Laplace transform method, density of localized states (DOS), lifetime (τ) |