Resistive Switching Behaviour in PMMA/Al:ZnO Composite Films |
| S. Vallabhapurapua, b, L.D. Varma Sanganic, M. Ghanashyam Krishnac, J. Dasd, C. Tub, S. Due, A. Srinivasanf, g
aSchool of Computing, University of South Africa, Johannesburg 1710, South Africa bComputer Systems Engineering, Faculty of Information and Communication Technology, Tshwane University of Technology, Pretoria 0001, South Africa cCASEST, School of Physics, University of Hyderabad, Hyderabad 500046, India dSilicon Institute of Technology, Bhubaneswar 751024, India eDepartment of Electrical Engineering, Faculty of Engineering and Built Environment, Tshwane University of Technology, Pretoria 0001, South Africa fDepartment of Physics, CSET, University of South Africa, Johannesburg 1710, South Africa gDepartment of Physics, Indian Institute of Technology, Guwahati 781039, India |
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| Considering the potential of polymer nanocomposites in resistive memory application, electrical conduction in poly methyl methacrylate thin films embedded with Al doped ZnO nanoparticles has been investigated. This polymer nanocomposite was spin coated on indium tin oxide coated glass plate and a titanium film was coated on top of this to form a device. Current-voltage characteristics of the fabricated device was measured. The current increased gradually with the increase of voltage, reaching a peak and dropped down to the low current (OFF) state. Upon further increase of voltage, a sharp increase of current (three orders of magnitude) or switching from low current (OFF) state to high current (ON) state occurred at ~2.9 V. Current-voltage characteristics have shown Ohmic behaviour in the low voltage regime followed by hopping type of conductivity prior to switching. |
DOI:10.12693/APhysPolA.134.68 topics: PMMA nano composite, Al:ZnO nanoparticle, electrical conduction, resistive switching |