Microstructure and Thermally Stimulated Luminescence of β -Ga2O3 Thin Films
O.M. Bordun, B.O. Bordun, I.I. Medvid and I.Yo. Kukharskyy
Ivan Franko National University of L'viv, Dragomanova Str. 50, 79005, Lviv, Ukraine
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Thermally stimulated luminescence of X-ray irradiated β -Ga2O3 thin films was investigated. An analysis of the form: of the elementary contours making the thermally stimulated luminescence curves shows that recombination processes at the thermally stimulated luminescence peaks with maxima at 77, 135, 178, and 235 K in thin films of β -Ga2O3 are described in terms of linear kinetics. The spectral composition of the thermally stimulated luminescence of the thin films was studied. Some methods are employed to determine the activation energies and frequency factors corresponding to the thermally stimulated luminescence peaks. It is established that the recombination processes occurring upon release of the trapping centers in thin films β -Ga2O3 are conditioned by diffusion-controlled tunneling recombination due to thermally-stimulated migration of Vk-centers.

DOI: 10.12693/APhysPolA.133.879
PACS numbers: 68.37.Ps, 78.60.-b, 81.15.-z