Resonant Photoemission Spectroscopy Study on the Contribution of the Yb 4f States to the Electronic Structure of ZnO
I.N. Demchenkoa, Y. Melikhov b, P. Konstantynov a, R. Ratajczak c, A. Barcz a and E. Guziewicz a
aInstitute of Physics, Polish Academy of Sciences, Al. Lotnikow 32/46, PL-02668, Warsaw, Poland
bSchool of Engineering, Cardiff University, Cardiff, CF24 3AA, United Kingdom
cNational Centre for Nuclear Research, A. Soltana 7, 05-400 Otwock-Swierk, Poland
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The electronic structure of Yb implanted ZnO has been studied by the resonant photoemission spectroscopy. The contribution of the Yb 4f partial density of states is predominant at binding energy about 7.5 and ≈11.7 eV below the VB maximum. At photon energy about 182 eV the multiplet structure around 11.7 eV shows the strongest resonance that corresponds to the 1I multiplet which is almost exclusively responsible for this resonance, while 3H and 3F states are responsible for the resonance around 7.5 eV. It was also found that the Yb 4f partial density of states distribution shows some similarity to Yb2O3.

DOI: 10.12693/APhysPolA.133.876
PACS numbers: 77.55.hf, 74.25.Jb, 33.60.+q