Origin of Point Defects in β-Ga2O3 Single Crystals Doped with Mg2+ Ions
A. Luchechko, V. Vasyltsiv, L. Kostyk and O. Tsvetkova
Department of Sensor and Semiconductor Electronics, Ivan Franko National University of Lviv, Tarnanavskogo Str. 107, Lviv 79017, Ukraine
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Optical absorption and photoconductivity investigations of nominal pure and Mg2+ doped β-Ga2O3 single crystals have been carried out. Additional bands in the UV (3.6-4.6 eV) and near-IR (0.4-1.2 eV) spectral regions were found in optical absorption and photoconductivity spectra. A correlation between Mg2+ doping, annealing in oxygen atmosphere as well as optical absorption and photoconductivity bands were established in gallium oxide. Electronic transitions from shallow traps and F-centers were observed in the IR spectral region (0.4-1.2 eV). Absorption and photoconductivity in the UV region are related to deep acceptor levels created by native defects and impurities.

DOI: 10.12693/APhysPolA.133.774
PACS numbers: 61.72.-y, 78.20.-e, 72.40.+w