Hydrogen Absorption in Gd Thin Films |
| A. Marczyńska, S. Pacanowski, B. Szymański and L. Smardz
Institute of Molecular Physics, Polish Academy of Sciences, M. Smoluchowskiego 17, 60-179 Poznań, Poland |
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| In this contribution we have studied an initial hydrogen absorption in Gd thin films using in-situ X-ray photoelectron spectroscopy (XPS) and ex-situ standard X-ray diffraction. As an initial hydrogen absorption indicator we have used broadening of the Gd-4f peak. The Gd thin films with a thickness of 200 nm were deposited at room temperature (RT) using UHV RF magnetron sputtering. As a substrate we have used naturally oxidised Si(100) wafers with 20 nm - Pd buffer layer. Furthermore, hydrogen absorption kinetics under a pressure of 100 mbar in Pd covered 200 nm Gd thin film was studied at RT using four-point resistivity measurements. |
DOI: 10.12693/APhysPolA.133.624 PACS numbers: 75.70.-i, 68.55.-a |