Mechanical Behavior of Aluminum Phosphide under Pressure |
| S. Daoud
Laboratoire Matériaux et Systèmes Electroniques (LMSE), Université Mohamed Elbachir El Ibrahimi de Bordj Bou Arreridj, Bordj Bou Arreridj, 34000, Algeria |
| Received: October 7, 2017; In final form: November 9, 2017 |
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| With the help of structural parameters and elastic constants obtained previously in our work (S. Daoud, N. Boiud, N. Lebga, J. Optoelectron. Adv. Mater. 16, 207 (2014)), different empirical formulae were successfully used to investigate: equation of state, the isotropic shear modulus, the Young modulus, the Cauchy ratio, the Born ratio, the Poisson ratio, the Pugh ratio, the Kleinman parameter, and the converse piezoelectric coefficient of the aggregate AlP material with cubic zinc-blende structure under pressure up to experimental pressure of phase transition (9.5 GPa). In addition, the Debye temperature at equilibrium volume was predicted, the result obtained is in excellent agreement compared to the experimental ones, the deviation is less than 1.4%. |
DOI: 10.12693/APhysPolA.133.23 Topics: AlP semiconductor, equation of state, mechanical behavior, piezoelectric coefficient |