Structural and Optical Properties of ZnO and Co Doped ZnO Thin Films Prepared by Sol-Gel
A.R. Khantoul a, M. Sebais a, B. Rahal b, B. Boudinea and O. Halimi a
aCrystallography Laboratory, Physics Department, Faculty of Exact Sciences, Mentouri Brothers University, Route Ain El Bey, Constantine 25000, Algeria
bSpectrometry Department, Nuclear Technical Division, Nuclear Research Center of Algiers, 2 Bd., Frantz Fanon, BP 399, Algiers 16000, Algeria.
Received: October 5, 2017; In final form: December 10, 2017
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We report on ZnO films doped with different Co concentrations (0, 0.5, and 1 wt%) prepared by sol-gel technique in association with dip-coating onto glass substrates. Zinc acetate dehydrate, cobalt acetate, mono ethanolamine were used as starting materials, as well as solvent and stabilizer, respectively. Nanostructured polycrystalline ZnO thin films with different concentrations of Co doping (0, 0.5, and 1 wt%) are prepared for the first time by the sol-gel method and annealed at 500°C for 1 h. The surface morphologies of the ZnO thin films deposited on glass substrate with different concentrations were evaluated by atomic force microscopy. The optical absorption of the films showed a blue shift of the band gap. The photoluminescence signal of the thin films of undoped and Co-doped ZnO presents different bands in the visible region. The electrical conductivity of the sample with 0.5%Co was found to be 4.62 (Ω C m)-1.

DOI: 10.12693/APhysPolA.133.114
Topics: Co doped ZnO, XRD, nanometric size, photoluminescence