Examination of the Change of the Characteristic X-Rays of the Zinc in Fluorine- and Boron-Doped ZnO Thin Films

Ö. Söğüta, S. Kerlib, E. Cengizc, d, G. Apaydınc aKahramanmaraş Sutcu Imam University, Faculty of Science and Letters, Department of Physics, 46100 Kahramanmaraş, Turkey bKahramanmaras Sutcu Imam University, Elbistan Technology Faculty Energy Systems Engineering, 46300 Kahramanmaraş, Turkey cKaradeniz Technical University, Faculty of Science, Department of Physics, 61080 Trabzon, Turkey dAlanya Alaaddin Keykubat Üniversitesi, Faculty of Engineering, Department of Fundamental Sciences, 07450 Antalya, Turkey

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In this study, Kβ/Kα X-ray intensity ratios of zinc in pure zinc, undoped ZnO thin film and boron and fluorine-doped ZnO thin films have been investigated. These samples have been excited by 59.5 keV γ-rays from a 241Am annular radioactive source. K X-rays emitted by the samples have been counted using an Ultra-LEGe detector with a resolution of 150 eV at 5.9 keV. The Kβ/Kα X-ray intensity ratios of the doped ZnO thin films have been compared with that of the undoped ZnO thin film. The deviations between the results can be explained by delocalization and/or charge transfer phenomena causing change in valence electronic configuration of zinc.

DOI:10.12693/APhysPolA.133.1124 PACS numbers: 32.30.Rj, 78.70.En, 32.30.-r, 32.80.Fb