Synthesis and Characterization of Manganese Sulphide Thin Films by Chemical Bath Deposition Method
G. Geetha a, P. Murugasen b and S. Sagadevanc
aResearch Scholar, Bharathiar University, Coimbatore, India
bDepartment of Physics, Saveetha Engineering, Chennai-600 123, India
cCentre for Nanotechnology, AMET University, Chennai-603 112, India
Received: November 10, 2015; Revised version: August 30, 2017; In final form: September 15, 2017
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Manganese sulphide (MnS) thin films were prepared by chemical bath deposition method. X-ray diffraction analysis was used to study the structure and the crystallite size of MnS thin films. The grain size and the surface morphology were studied using scanning electron microscopy. The optical properties were studied using the UV-visible absorption spectrum. The dielectric properties of MnS thin films were studied for different frequencies and different temperatures. Further, electronic properties, such as valence electron plasma energy, average energy gap or the Penn gap, the Fermi energy and electronic polarizability of the MnS thin films were calculated. The ac electrical conductivity study revealed that the conduction depended both on the frequency and the temperature. The temperature dependent conductivity study confirmed the semiconducting nature of the films.

DOI: 10.12693/APhysPolA.132.1221
topics: MnS thin films, XRD, SEM, dielectric studies