Magnetotransport in Si⟨Sb⟩ Delta-Layer after Swift Heavy Ion-Induced Modification |
| A.S. Fedotov a, V.A. Skuratovb,c,d, D.V. Yurasove,f, A.V. Novikove,f, I.A. Svito a, P.Yu. Apelb,c, A.K. Fedotov a, P.V. Zukowskig and V.V. Fedotova h
aBelarusian State University, Nezaleznasci av., 220030 Minsk, Belarus bJoint Institute for Nuclear Research, Joliot-Curie 6, 141980, Dubna, Russia cDubna State University, Universitetskaya 19, 141982, Dubna, Russia dNational Research Nuclear University MEPhI, Kashirskoe hwy 31, 115409, Moscow, Russia eInstitute for Physics of Microstructures, Russian Academy of Sciences, Academic 7, 603950, Nizhny Novgorod, Russia fLobachevsky State University of Nizhny Novgorod, Gagarina av. 23, 603950, Nizhny Novgorod, Russia gLublin University of Technology, Nadbystrzycka 38D, 20-618 Lublin, Poland hScientific-Practical Material Research Centre, National Academy of Sciences of Belarus, Brovki 19, 220072 Minsk, Belarus |
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| In the present paper the investigations of the influence of swift heavy ion irradiation on the magnetotransport in the antimony (Sb) δ-layer in silicon are reported. Temperature and magnetic field dependences of the resistance R(T,B) and the Hall coefficient RH(T,B) in the temperature range of 2 K < T < 300 K and B ≤ 8 T before and after the 167 MeV Xe+26 ion irradiation (ion fluence of 108 cm-2) were measured. At the temperatures below 50 K there is observed the transition from the Arrhenius log R(1/T) to a logarithmic R ≈ -log(T) dependence both before and after the swift heavy ion exposure which confirms the assumption that the carrier transport goes through the δ-layer mainly. Moreover, the transition from the positive to negative magnetoresistance was observed with the temperature decrease that is characteristic of the two-dimensional quantum corrections to the conductivity in the case of weak localization regime. The appropriate Thouless lengths LTh(T) ≈ A × Tp (where p and A are dependent on the scattering mechanism) indicated their ≈25-30% decrease after the swift heavy ion exposure. It was shown that the exponent p values were close to the theoretical one of p =1, confirming the realization of 2D weak localization regime in the carrier transport. |
DOI: 10.12693/APhysPolA.132.229 PACS numbers: 72.20.My, 73.20.Fz, 73.40.-c, 61.80.Jh |