Modeling, Simulation and Characterization of Aluminum Implantation in 4H-SiC for Large-Area Photodiode Technology
A. KociubiƄski
Lublin University of Technology, Nadbystrzycka 38a, 20-618 Lublin, Poland
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Simulation, modeling and characterization of the aluminum ion implantation in 4H-SiC for large-area photodiode technology have been presented in this paper. Modeling and simulation have been performed using the SRIM and TCAD software EDA environments. Main goals were to present and compare the single vs. multiple ion implantation results as well to develop processes leading to achieve required implantation profiles.

DOI: 10.12693/APhysPolA.132.225
PACS numbers: 85.30.De, 85.30.Kk