In Situ Raman Spectroscopy of Solution-Gated Graphene on Copper
J. Bindera, R. Stępniewski a, W. Strupiński b and A. Wysmołek a
aFaculty of Physics, University of Warsaw, L. Pasteura 5, 02-093 Warsaw, Poland
bInstitute of Electronic Materials Technology, Wólczyńska 133, 01-919 Warsaw, Poland
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We present a solution-gated in situ Raman spectroscopy approach, which enables the electrical characterization of graphene on a copper substrate without the need of a transfer process. The application of a voltage across the solution resulted in a shift of the Raman G-band without a significant shift of the 2D band. This observation allowed for the separation of the effects of strain and doping. Based on the G and 2D band shifts we show that we can manipulate the n-type carrier concentration of graphene directly on the copper substrate in a range from about 8×1012 cm-2 to about 1.5×1013 cm-2.

DOI: 10.12693/APhysPolA.132.360
PACS numbers: 68.65.Pq, 78.67.Wj, 73.30.+y