Electronic Properties of Structures Containing Films of Alq3 and LiBr Deposited on Si(111) Crystal |
| J. Sito, M. Grodzicki, K. Lament, R. Wasielewski, P. Mazur and A. Ciszewski
Institute of Experimental Physics, University of Wrocław, pl. M. Borna 9, 50-204 Wrocław, Poland |
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| The electronic structures of Alq3/Si(111) and Alq3/LiBr/Si(111) interfaces are presented in this report. The studies were carried out in situ in ultrahigh vacuum by ultraviolet photoelectron spectroscopy. Alq3 and LiBr layers were vapour deposited onto a single crystal of n-type Si(111). The energy level diagrams were prepared for the structures. The formation of the LiBr interfacial layer results in a decrease of the energy barrier at the interface. |
DOI: 10.12693/APhysPolA.132.357 PACS numbers: 81.07.Pr, 73.40.Ty, 79.60.-i |