Electronic Properties of Structures Containing Films of Alq3 and LiBr Deposited on Si(111) Crystal
J. Sito, M. Grodzicki, K. Lament, R. Wasielewski, P. Mazur and A. Ciszewski
Institute of Experimental Physics, University of Wrocław, pl. M. Borna 9, 50-204 Wrocław, Poland
Full Text PDF
The electronic structures of Alq3/Si(111) and Alq3/LiBr/Si(111) interfaces are presented in this report. The studies were carried out in situ in ultrahigh vacuum by ultraviolet photoelectron spectroscopy. Alq3 and LiBr layers were vapour deposited onto a single crystal of n-type Si(111). The energy level diagrams were prepared for the structures. The formation of the LiBr interfacial layer results in a decrease of the energy barrier at the interface.

DOI: 10.12693/APhysPolA.132.357
PACS numbers: 81.07.Pr, 73.40.Ty, 79.60.-i