Ru/GaN(0001) Interface Properties
R. Wasielewski, M. Grodzicki, J. Sito, K. Lament, P. Mazur and A. Ciszewski
Institute of Experimental Physics, University of Wrocław, pl. M. Borna 9, 50-204 Wrocław, Poland
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We report the results of our studies of ruthenium layer structures adsorbed on GaN(0001). Ruthenium was evaporated at room temperature under ultrahigh vacuum conditions onto n-type GaN substrates epitaxially grown on sapphire. While X-ray photoelectron spectroscopy confirmed the presence of Ru bonds in the deposited adlayers, the ultraviolet photoelectron spectroscopy show a peak at the Fermi level as well as lines originating from ruthenium. The height of the Schottky barrier was calculated based on the data measured by X-ray photoelectron spectroscopy and ultraviolet photoelectron spectroscopy and amounts to 1.5 eV.

DOI: 10.12693/APhysPolA.132.354
PACS numbers: 68.47.Fg, 73.30.+y, 82.80.Pv