Studies of Dark Current Reduction in InAsSb Mid-Wave Infrared HOT Detectors through Two Step Passivation Technique |
| K. Michalczewskia, F. Ivaldi b, Ł. Kubiszyn b, D. Benyahia a, J. Boguski a, A. Kębłowski b, P. Martyniuk a, J. Piotrowski b and A. Rogalski a
aInstitute of Applied Physics, Military University of Technology, S. Kaliskiego 2, 00-908 Warsaw, Poland bVigo System S.A., Poznańska 129/133, 05-850 Ożarów Mazowiecki, Poland |
| Full Text PDF |
| We report on the investigation of the surface leakage current for InAs1-xSbx (x=0.09) high operation temperature photodiode grown on GaAs substrate in accelerated short-term stability test. The electrochemical passivation technique was proposed to modify the mesa sidewalls properties and obtain anodic sulphur coating covered by SU-8 negative photoresist. The electrical behavior of sulphur anodic film, SU-8 photoresist, and unpassivated devices was compared for devices in variable area diode array test. The surface resistivity for anodic sulphur film, SU-8 and unpassivated devices are equal to 1080, 226, 10200 kΩ cm, respectively, at 150 K and 1340, 429, 2870 kΩ cm, respectively, at 150 K after an exposure of 20 h to atmosphere at 373 K. The Auger recombination process was evaluated as the main mechanism of diffusion current in HOT devices. |
DOI: 10.12693/APhysPolA.132.325 PACS numbers: 73.61.Ey, 73.25.+i, 82.45.Cc |