Studies of Dark Current Reduction in InAsSb Mid-Wave Infrared HOT Detectors through Two Step Passivation Technique
K. Michalczewskia, F. Ivaldi b, Ł. Kubiszyn b, D. Benyahia a, J. Boguski a, A. Kębłowski b, P. Martyniuk a, J. Piotrowski b and A. Rogalski a
aInstitute of Applied Physics, Military University of Technology, S. Kaliskiego 2, 00-908 Warsaw, Poland
bVigo System S.A., Poznańska 129/133, 05-850 Ożarów Mazowiecki, Poland
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We report on the investigation of the surface leakage current for InAs1-xSbx (x=0.09) high operation temperature photodiode grown on GaAs substrate in accelerated short-term stability test. The electrochemical passivation technique was proposed to modify the mesa sidewalls properties and obtain anodic sulphur coating covered by SU-8 negative photoresist. The electrical behavior of sulphur anodic film, SU-8 photoresist, and unpassivated devices was compared for devices in variable area diode array test. The surface resistivity for anodic sulphur film, SU-8 and unpassivated devices are equal to 1080, 226, 10200 kΩ cm, respectively, at 150 K and 1340, 429, 2870 kΩ cm, respectively, at 150 K after an exposure of 20 h to atmosphere at 373 K. The Auger recombination process was evaluated as the main mechanism of diffusion current in HOT devices.

DOI: 10.12693/APhysPolA.132.325
PACS numbers: 73.61.Ey, 73.25.+i, 82.45.Cc