Relative Reflection Difference as a Method for Measuring the Thickness of the Exfoliated MoSe2 Layers
K. Łempicka, K. Norowski, M. Grzeszczyk, M. Król, K. Lekenta, A. Babiński, B. Piętka and J. Szczytko
Institute of Experimental Physics, Faculty of Physics, University of Warsaw, Pasteura 5, 02-093 Warsaw, Poland
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We propose a method for measuring the thickness of the exfoliated MoSe2 layers deposited on Si/SiO2 substrate, based on the reflectance measurements performed with laser light illumination at two different wavelengths: red and green from confocal microscope at room temperature. We demonstrate the correlation between the number of layers in a flake and the value of its relative reflection difference. We applied the transfer matrix method to calculate the reflectivity and verify our experimental results. The approach proposed by us allows for fast and automatic verification of the exfoliated MoSe2 layers thickness on large areas of the substrate.

DOI: 10.12693/APhysPolA.132.316
PACS numbers: 63.20.dd, 78.20.Ci, 78.30.-j, 78.66.Li