Thermal Desorption of Krypton Implanted into Silicon
M. Tureka, A. Droździel a, A. Wójtowicz a, J. Filiks a, K. Pyszniak a, D. Mączka b and Y. Yuschkevich c
aInstitute of Physics, Maria Curie-Skłodowska University in Lublin, pl. M. Curie-Skłodowskiej 1, 20-031 Lublin, Poland
bNational Center for Nuclear Studies, A. Sołtana 7, 05-400 Otwock, Poland
cJoint Institute for Nuclear Research, Joliot-Curie 6, Dubna, Russia
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The thermal desorption spectrometry studies of krypton implanted Si samples are presented. Implantations (with the fluence 2×1016 cm-2) were done with the energies 100, 150, and 200 keV. Additionally, a 200 keV and 100 keV Kr+G double implantation was performed. A sudden Kr release was observed in the ≈1100-1400 K range, most probably coming from the gas bubbles in cavities. The desorption activation energy varies from 2.5 eV (100 keV) to 0.8 (200 keV). The peak splitting suggests existence of two kinds of cavities trapping the implanted noble gas. Two Kr releases are observed for the 200 and 100 keV double-implanted samples. The peak shift of the release corresponding to 100 keV implantation could be a result of both introduced disorder and higher effective Kr concentration. The desorption activation energy is risen to ≈3.2 eV for both releases.

DOI: 10.12693/APhysPolA.132.249
PACS numbers: 68.43.Vx, 61.72.uf