Effect of Rashba Spin-Orbit Coupling on the Spin Polarization of Holes in Two-Dimensional GaMnAs Magnetic Semiconductors
S. Stagraczyńskia, V.K. Dugaev b and J. Berakdar a
aInstitut für Physik, Martin-Luther-Universität Halle-Wittenberg, Karl-Freiherr-von-Fritsch-Str. 3, 06120 Halle (Saale), Germany
bDepartment of Physics and Medical Engineering, Rzeszów University of Technology, al. Powstańców Warszawy 6, 35-959 Rzeszów, Poland
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We consider the effect of the Rashba spin-orbital coupling in two-dimensional GaAs semiconductor heavily doped with Mn, on the spin polarization of holes. Due to the strong internal spin-orbit interaction in GaAs, the spin of a hole is not a good quantum number but the hole in some energy state has a certain mean value of spin, which can be strongly affected by the Rashba spin-orbital interaction related to the substrate for 2D material.

DOI: 10.12693/APhysPolA.132.189
topics: Magnetization, Rashba spin-orbit coupling