Functional Properties of Monolayer and Bilayer Graphene Hall-Effect Sensors
M. Kachniarz a, O. Petruk a, J. Salachb, T. Ciuk c, W. Strupiński c, A. Bieńkowski b and R. Szewczyk b
aIndustrial Research Institute for Automation and Measurements, Al. Jerozolimskie 202, 02-486 Warsaw, Poland
bInstitute of Metrology and Biomedical Engineering, Warsaw University of Technology, sw. A. Boboli 8, 02-525 Warsaw, Poland
cInstitute of Electronic Materials Technology, Wólczyńska 133, 01-919 Warsaw, Poland
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The paper describes the design, development, and investigation of a new type of Hall-effect sensors of a magnetic field made of graphene. The epitaxial growth of high-quality graphene structures was performed using a standard hot-wall CVD reactor, which allows for easy integration with an existing semiconductors production technologies. The functional properties of developed Hall-effect sensors based on graphene were investigated on special experimental setup utilizing Helmholtz coils as a source of reference magnetic field. Monolayer and quasi-free-standing bilayer graphene structures were tested. Results presented in the paper indicate that graphene is very promising material for development of Hall-effect sensors. Developed graphene Hall-effect sensor exhibit highly linear characteristics and high magnetic field sensitivity.

DOI: 10.12693/APhysPolA.131.1250
PACS numbers: 07.55.Ge, 85.75.Ss, 85.30.Fg, 81.05.ue, 73.22.Pr, 72.80.Vp