Characterization of Epitaxial LSMO Films Grown on STO Substrates
M. Špankováa, V. Štrbík a, Š. Chromik a, D.N. Zheng b, J. Li b, D. Machajdíka,c, A.P. Kobzev c, T. Plecenik d and M. Sojková a
aInstitute of Electrical Engineering SAS, Dúbravská cesta 9, 84104 Bratislava, Slovakia
bBeijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
cJoint Institute for Nuclear Research, Dubna, Moscow Region, Russia
dFaculty of Mathematics, Physics and Informatics, Comenius University, Mlynská Dolina F1, 842 48 Bratislava, Slovakia
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Epitaxial manganite La0.67Sr0.33MnO3 (LSMO) layers, with a thickness of 20-50 nm, are prepared on single crystal (001) SrTiO3 (STO) substrates by pulsed laser deposition technique. Structural characterization (composition analysis, surface morphology), investigated by the Rutherford backscattering spectroscopy and atomic force microscopy, reveals the growth of stoichiometric LSMO films with a smooth surface (root-mean-square value of 0.21-1.6 nm). The prepared LSMO films possess high Curie temperature ( ≈ 412 K), low room temperature resistivity (1-2 mΩ cm) and maximum of temperature coefficient of resistivity TCR = 2.7% K-1 at 321 K.

DOI: 10.12693/APhysPolA.131.848
PACS numbers: 68.37.Ps, 75.47.Lx, 75.70.Ak, 81.15.Fg