Effect of Current Annealing on Domain Structure in Amorphous and Nanocrystalline FeCoMoB Microwires

P. Klein a, R. Varga a,b, J. Onufer c, J. Ziman c, G.A. Badini-Confalonieri d and M. Vazquez d aRVmagnetics a.s., Hodkovce 21, 04421 Košice, Slovakia bInstitute of Physics, Faculty of Sciences, P.J. Safarik University, Park Angelinum 9, 041 54 Košice, Slovakia cDepartment of Physics, FEEI, TUKE, Park Komenského 2, 042 00 Košice, Slovakia dInstitute of Material Science of Madrid, CSIC, 28049 Madrid, Spain

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The influence of current annealing on the complex domain structure in amorphous and nanocrystalline FeCoMoB microwire has been studied. The thickness of radial domain structure together with the switching field of single domain wall change as a consequence of variation of complex internal stress distribution inside metallic core. Firstly, radial domain structure thickness monotonously increases with increasing annealing DC current density for amorphous state. Switching field exhibits local minimum in nanocrystalline sample annealed at 500 MA/m2 for 10 min when the lowest thickness of outer shell (182 nm) was observed. Such annealed sample (which magnetic properties exhibit excellent temperature stability) is suitable candidate for miniaturized sensor construction for sensing the magnetic field or mechanical stress.

DOI: 10.12693/APhysPolA.131.681 PACS numbers: 75.50.Kj, 75.60.Ej, 75.60.Jk, 75.70.Kw, 75.60.Ch