X-Ray Diffraction Study of CeT2Al10 (T = Ru, Os) at Low Temperatures and under Pressures
Y. Kawamuraa, J. Hayashi a, K. Takeda a, C. Sekine a, H. Tanida b, M. Sera b, S. Nakano c, T. Tomita d, H. Takahashi e and T. Nishioka f
aMuroran Institute of Technology, Muroran, Hokkaido 050-8585, Japan
bHiroshima University, Higashi-Hiroshima, Hiroshima 739-8530, Japan
cNational Institute for Materials Science, Tsukuba, Ibaraki 305-0044, Japan
dISSP, University of Tokyo, Kashiwa, Chiba 277-8581, Japan
eNihon University, Sakurajosui, Setagaya, Tokyo 156-8550, Japan
fKochi University, Kochi, Kochi 780-8520, Japan
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We have carried out a powder X-ray diffraction investigation on antiferromagnetic Kondo semiconductors CeRu2Al10 and CeOs2Al10 at low temperatures and under high pressures as well as the structural investigation on single crystal of these compounds. The results of powder X-ray studies of CeRu2Al10 and CeOs2Al10 indicate that these compounds do not have structural transition at its antiferromagnetic ordering temperature. The results of single crystal structural refinement indicate that the b-axis of this crystal structure is insensitive not only to pressure but also to temperature and that the effect of cooling to Ce-Ce distance for CeRu2Al10 is the same as that for CeOs2Al10.

DOI: 10.12693/APhysPolA.131.988
PACS numbers: 61.50.Ks