ACTA

X-Ray Diffraction Study of CeT₂Al₁₀ (T = Ru, Os) at Low Temperatures and under Pressures

Y. Kawamura^a, J. Hayashi^a, K. Takeda^a, C. Sekine^a, H. Tanida^b, M. Sera^b, S. Nakano^c, T. Tomita^d, H. Takahashi^e and T. Nishioka^f
^aMuroran Institute of Technology, Muroran, Hokkaido 050-8585, Japan
^bHiroshima University, Higashi-Hiroshima, Hiroshima 739-8530, Japan
^cNational Institute for Materials Science, Tsukuba, Ibaraki 305-0044, Japan
^dISSP, University of Tokyo, Kashiwa, Chiba 277-8581, Japan
^eNihon University, Sakurajosui, Setagaya, Tokyo 156-8550, Japan
^fKochi University, Kochi, Kochi 780-8520, Japan

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We have carried out a powder X-ray diffraction investigation on antiferromagnetic Kondo semiconductors CeRu₂Al₁₀ and CeOs₂Al₁₀ at low temperatures and under high pressures as well as the structural investigation on single crystal of these compounds. The results of powder X-ray studies of CeRu₂Al₁₀ and CeOs₂Al₁₀ indicate that these compounds do not have structural transition at its antiferromagnetic ordering temperature. The results of single crystal structural refinement indicate that the b-axis of this crystal structure is insensitive not only to pressure but also to temperature and that the effect of cooling to Ce-Ce distance for CeRu₂Al₁₀ is the same as that for CeOs₂Al₁₀.

DOI: 10.12693/APhysPolA.131.988
PACS numbers: 61.50.Ks