Structural and Electrical Properties of SnO2:F Thin Films Prepared by Chemical Vapor Deposition Method
N. Najafi and S.M. Rozati
CVD Laboratory, Physics Department, University of Guilan, 41938-33697 Rasht, Iran
Received: August 10, 2015; In final form: January 22, 2017
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Fluorine doped tin oxide (FTO) thin films were deposited onto glass substrate at different substrate temperatures by a simple and inexpensive method of air pressure chemical vapor deposition. The substrate temperature was kept constant at about 500°C as the optimum temperature, and air was used as both a carrier gas and the oxidizing agent. A very simple method of characterization were carried on to investigate the electrical and structural properties of the prepared thin films. The electrical parameters variations showed that these parameters vary with substrate temperature ranging from an insulator thin film to a highly conductive layer. X-ray diffraction also revealed the structure to be polycrystalline at higher temperatures compared to amorphous structure for lower temperatures.

DOI: 10.12693/APhysPolA.131.222
PACS numbers/topics: chemical vapor deposition, SnO2:F thin films, structural properties, electrical properties