Light Induced Modification of Graphene Oxide Layers on GaN Basis
A. Łopiona, L. Stobiński b, K. Pakuła a, R. Bożek a, P. Kaźmierczak a, A. Wysmołek a and R. Stępniewski a
aFaculty of Physics, University of Warsaw, L. Pasteura 5, 02-093 Warsaw, Poland
bFaculty of Chemical and Process Engineering, Warsaw University of Technology, L. Waryńskiego 1, 00-645 Warsaw, Poland
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Graphene oxide suspension in various solvents was spin coated on metal organic vapor phase epitaxy grown GaN/saphire layers. Samples were characterised using the Raman spectroscopy and atomic force microscopy, before and after high temperature treatment. We found that graphene oxide was modifed by high temperature treatment, however a considerable modification was also observed as a result of impinged laser light incident due to the measurements. The Raman spectra were decomposed into two contributions showing different behaviour during the Raman scattering measurements.

DOI: 10.12693/APhysPolA.130.1169
PACS numbers: 73.22.-f, 78.55.-m, 78.30.-j, 07.05.Kf