Room Temperature Carrier Kinetics in the W-type GaInAsSb/InAs/AlSb Quantum Well Structure Emitting in Mid-Infrared Spectral Range
M. Sypereka, K. Ryczko a, M. Dallner b, M. Dyksik a, M. Motyka a, M. Kamp b, S. Höflingb,c, J. Misiewicz a and G. Sęk a
aLaboratory for Optical Spectroscopy of Nanostructures, Department of Experimental Physics, Faculty of Fundamental Problems of Technology, Wrocław University of Science and Technology, Wybrzeże S. Wyspiańskiego 27, 50-370 Wrocław, Poland
bTechnische Physik, University of Würzburg and Wilhelm-Conrad-Röntgen-Research Center, for Complex Material Systems, Am Hubland, D-97074 Würzburg, Germany
cSchool of Physics and Astronomy, University of St. Andrews, North Haugh, KY16 9SS St. Andrews, United Kingdom
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Room temperature carrier kinetics has been investigated in the type-II W-design AlSb/InAs/Ga0.80In0.20As0.15Sb0.85/InAs/AlSb quantum well emitting in the mid-infrared spectral range (at 2.54 μm). A time-resolved reflectance technique, employing the non-degenerated pump-probe scheme, has been used as a main experimental tool. Based on that, a primary carrier relaxation time of 2.3±0.2 ps has been found, and attributed to the initial carrier cooling process within the quantum well states, while going towards the ground state via the carrier-optical phonon scattering mechanism. The decay of a quasi-equilibrium carrier population at the quantum well ground states is primarily governed by two relaxation channels: (i) radiative recombination within distribution of spatially separated electrons and holes that occurs in the nanosecond time scale, and (ii) the hole tunnelling out of its confining potential, characterized by a 240 ± 10 ps time constant.

DOI: 10.12693/APhysPolA.130.1224
PACS numbers: 73.21.Fg, 78.47.D-, 78.30.Fs, 78.47.jg, 78.55.Cr, 78.67.De