Two-Probe Measurements of Electron Transport in GaN:Si/(Ga,Mn)N/GaN:Si Spin Filter Structures

K. Kalbarczyk a, M. Foltyn a, M. Grzybowski a, W. Stefanowicz a, R. Adhikari b, Tian Li a, R. Kruszka c, E. Kamińska c, A. Piotrowska c, A. Bonanni b, T. Dietla,d,e, and M. Sawicki a aInstitute of Physics, Polish Academy of Sciences, Aleja Lotnikow 32/46, PL-02668 Warsaw, Poland bInstitut für Halbleiter- und Festkörperphysik, Johannes Kepler University, Linz, Austria cInstitute of Electron Technology, Warszawa, Poland dInstitute of Theoretical Physics, Faculty of Physics, University of Warsaw, Warszawa, Poland eWPI-Advanced Institute for Materials Research, Tohoku University, Sendai, Japan

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Results of two-probe magnetoresistance studies in GaN:Si/(Ga,Mn)N/GaN:Si prospective spin filter structures are reported. It is postulated that transport characteristics are strongly influenced by highly conductive threading dislocations and that shrinking of the device size partially mitigates the issue. Simultaneously, maxima at ≈1500 Oe on overall weak, up to 2%, negative magnetoresistance are seen at low temperature, whose origin has been tentatively assigned to effects taking place at the contacts areas.

DOI: 10.12693/APhysPolA.130.1196 PACS numbers: 72.25.Dc, 73.40.Cg, 73.43.Qt, 78.55.Cr