Nanoscale Deformation of GaAs Affected by Silicon Doping
A. Majtyka a, R. Nowak a and D. Chrobak b
aNordic Hysitron Laboratory, Department of Materials Science and Engineering, School of Chemical Technology, Aalto University, 00076 Aalto, Finland
bInstitute of Materials Science, Faculty of Computer Science and Materials Science, University of Silesia, 75 Pułku Piechoty 1A, 41-500 Chorzów, Poland
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Effect of silicon doping on the elastic-plastic transition of GaAs crystal is demonstrated by results of nanoindentations and ab initio simulations. The performed experiments show that an increase of silicon concentration causes a decrease of the contact pressure at the onset of permanent nanodeformation of GaAs crystal. Ab initio calculations demonstrate that presence of Si atoms in the crystal lattice suppresses the shear modulus as well as the pressure of equilibrium between zinc-blende and rock-salt phases of GaAs. Furthermore, it is argued that the effect of dislocations pinning to Si dopants is essential for clarification of GaAs yielding.

DOI: 10.12693/APhysPolA.130.1127
PACS numbers:, 61.72.J-