Structure and Stress in Au/Cu Two-Layer System during Annealing at Different Temperature

D. Chocyk Department of Applied Physics, Lublin University of Technology, Nadbystrzycka 38, 20-618 Lublin, Poland

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In this work, the Au/Cu two-layer systems, with the total thickness equal to 30 nm are studied. The two-layer systems were deposited by thermal evaporation in a UHV system on the silicon substrate at room temperature. After deposition the samples were annealed. We examined samples subjected to thermal cycle with the different maximum temperature. The X-ray diffraction and X-ray reflectometry are performed for systems before and after annealing. It was found that during the cycle of annealing above 150°C starts process of penetration of the Au layer by Cu atoms results in alloying. In Au/Cu systems, the final layer is the ordered Au/Cu3 phase.

DOI: 10.12693/APhysPolA.130.1118 PACS numbers: 68.60.Bs, 68.60.Dv, 68.65.Ac