Poly(ethylene glycol dimethacrylate-co-1-vinyl-1,2,4-triazole/ carbon nanotube, single-walled)/n-GaAs Diode Formed by Surface Polymerization
M. Ahmetoglu a, A. Kara b and B. Kucur a
aUludag University, Physics Department, Bursa, Turkey
bUludag University, Physical Chemistry Department, Bursa, Turkey
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Poly(ethylene glycol dimethacrylate-co-1-vinyl-1,2,4-triazole/carbon nanotube, single-walled)/n-GaAs ([P(EGDMA-VTAZ)-CNSW]/n-GaAs) diode was fabricated by using surface polymerization method. Electrical properties were carried out at several temperatures. Dark current mechanisms were investigated by using current-voltage (I-V) measurements. It was shown that the fabricated structure exhibited rectification behaviour that makes it a good candidate for electronic device applications.

DOI: 10.12693/APhysPolA.130.206
PACS numbers: 82.35.-x, 85.30.-z