Experimental Characterization of Antimony Dopant in Silicon Substrate
H. Serrar a, R. Labbani a and C. Benazzouz b
aLaboratoire de Physique Mathématique et Subatomique, Département de Physique, Faculté des Sciences Exactes, Université Mentouri de Constantine, Route de Ain El Bey, 25000 Constantine, Algeria
bCentre de Développement des Techniques Nucléaires, 2 Bd Frantz Fanon, BP 399, Alger Gare, Algeria
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Ion implantation is a method largely used to fabricate shallow junctions in the surface target. However, the ions are randomly redistributed and a huge damage is generated in the sample. Annealing treatments are thus necessary to restore defects and to activate the dopant. Among several elements, antimony is particularly attractive since it has low diffusivity in silicon which means that is suitable to obtain ultra shallow junctions. Moreover, antimony is attractive in many applications such as the fabrication of transistors and infrared detectors. In this work, the electrical activation of antimony is studied in case of silicon target.

DOI: 10.12693/APhysPolA.130.51
PACS numbers: 61.72.U-, 68.55.Ln, 85.40.Ry