Influence of Growth Conditions of Hydrogenated Amorphous Silicon Carbide on Optical Properties of the Interfacial Layer in SiC-Based Photodevice |
| S. Kaci a, A. Keffous a, I. Bozetine a, M. Trari b and O. Fellahi a
aResearch Center on Semiconductor Technology for Energetic, 2 Bd Frantz Fanon, PB 140, 7M Algiers, Algeria bUniversity of Science and Technology Houari Boumediene, PB 32, ElAlia, Bab Ezzouar, Algiers, Algeria |
| Full Text PDF |
| The attention has been focused on the optical properties of structures of the form: Au/MS/a-Si1-xCx:H/Si(100)/Al as a function of the deposition temperature of the a-Si1-xCx:H films. The amorphous SiC:H films were obtained for different temperatures ranging from 150°C up to 500°C. By photoluminescence, blue emission from all the structures was observed at room temperature and a high emission was obtained for sample whose amorphous film was deposited at 500°C. The spectral response of Au/MS/a-Si1-xCx:H/Si(100)/Al structures with a-Si1-xCx:H film deposited at 250°C, exhibits a maximum value at λ=950 nm while for structure with a-Si1-xCx:H film obtained at 150°C, a maximum value of λ was observed at 400 nm. |
DOI: 10.12693/APhysPolA.130.463 PACS numbers: 78.68.+m, 78.66.-w, 78.67.Bf, 78.55.-m |