A Quantitative Approach for the Determination of Light Induced Defects in a-Se90Sb10-xAgx Thin Films by Using Thermally Stimulated Current Technique
Anjani Kumar a, S.K. Tripathi b and A. Kumara
aDepartment of Physics, Harcourt Butler Technological Institute, Kanpur, India
bDepartment of Physics, Panjab University, Chandigarh, India
Received: August 22, 2015; In final form: March 13, 2016
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Thin films of Se90Sb10-xAgx (x=0, 2, 4, 6, 8) glasses have been prepared by vacuum evaporation technique. Present study reports the quantitative estimation of light induced defects in aforesaid thin films by using thermally stimulated current technique. Measurements have been made in a vacuum ≈10-3 Torr before and after exposing amorphous films to white light for different exposure times (0 to 6 h). Results indicate that light induced defects are created due to prolonged exposure of light and this is explained by a microscopic model proposed by Shimakawa and co-workers. It is also found that fractional increase in light induced defect density decreases as Ag concentration increases. A discontinuity has, however, been observed at 4 at.% of Ag which is explained in terms of average coordination number.

DOI: 10.12693/APhysPolA.129.1178
PACS numbers: 71.55.Jv, 72.80.Ng