Electrical Characteristics and Temperature Dependence of Photovoltaic Parameters of GaInAsSb Based TPV Diode
B. Kucura, M. Ahmetoglua, I.A. Andreevb, E.V. Kunitsynab, M.P. Mikhailovab, and Y.P. Yakovlevb
aDepartment of Physics, Faculty of Sciences and Arts, Uludag University, 16059, Bursa, Turkey
bIoffe Physical-Technical Institute, Russian Academy of Sciences, Saint Petersburg 194021, Russia
Full Text PDF
In this paper, electrical characterization of low bandgap GaInAsSb based thermophotovoltaic (TPV) diodes were investigated, as well as the temperature dependence of photovoltaic parameters such as short circuit current (Isc) and open circuit voltage (Voc). Investigation of the dark current mechanisms of the structure was carried out at several temperatures. The effect of light intensity on current-voltage characteristics was also investigated.

DOI: 10.12693/APhysPolA.129.767
PACS numbers: 73.40.Lq, 72.40.+w, 85.60.-q