Optical and Electrical Properties of Highly Doped ZnO:Al Films Deposited by Atomic Layer Deposition on Si Substrates in Visible and Near Infrared Region
V. Romanyuk a, N. Dmitruk a, V. Karpyna b, G. Lashkarev b, V. Popovych b, M. Dranchukb, R. Pietruszka c, M. Godlewski c, G. Dovbeshko d, I. Timofeeva b, O. Kondratenko a, M. Taborska a, and A. Ievtushenko b
a Institute of Semiconductor Physics, NASU, prosp. Nauky 45, Kyiv, Ukraine
b Institute for Problems of Material Science, NASU, Krzhizhanovskogo 3, Kyiv, Ukraine
c Institute of Physics, PAS, al. Lotników 32/46, 02-668 Warsaw, Poland
d Institute of Physics, NASU, prosp. Nauky 46, Kyiv, Ukraine
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Optical properties of ZnO films doped by Al in the range 0.5 to 7 at.% and deposited by atomic layer deposition were studied in visible and infrared spectral range. Spectral dependences of film optical permittivity were modeled with the Lorentz-Drude approximation resulting in ZnO:Al plasma frequency and plasma damping parameters. We observed changing electron effective mass from 0.29m0 to 0.5m0 with increasing electron concentration in the range (0.9-4)× 1020 due to the phenomenon of conduction band non-parabolicity. Comparing the results of optical and electrical investigations we can see that the main scattering mechanism is the scattering on grain boundaries (its contribution is about 60%).

DOI: 10.12693/APhysPolA.129.A-36
PACS numbers: 78.66.Hf, 73.61.Ga