Influence of Cr-Substitution on the Electrical Properties of Fe1-xCrxSnSbO6
T. Grońa, G. Dąbrowska b, E. Filipek b, H. Duda a and B. Sawicki a
aUniversity of Silesia, Institute of Physics, Uniwersytecka 4, 40-007 Katowice, Poland
bWest Pomeranian University of Technology in Szczecin, Department of Inorganic and Analytical Chemistry, al. Piastów 42, 71-065 Szczecin, Poland
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Fe1-xCrxSnSbO6 solid solution shows semiconducting behaviour with the activation energy decreasing from EA=0.64 eV for x=0.0 to EA=0.32 eV for x=1.0 in the intrinsic conductivity temperature region as well as the n-type conduction at room temperature. The I-V characteristics and the conductance G at 300 and 400 K showed symmetrical and nonlinear behavior in the voltage range (-100, 100 V) suggesting the electron emission over the potential barrier especially for the boundary compounds FeSnSbO6 and CrSnSbO6. These effects are discussed in the context of the energy gap Eg>1.6 eV many times greater than the thermal energy kT.

DOI: 10.12693/APhysPolA.129.A-153
PACS numbers: 72.20.Pa, 72.80.Ga, 75.20.-g